0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2.4 +0.1 -0.1 1.3 +0.1 -0.1 0-0.1 0.38 +0.1 -0.1 0.97 +0.1 -0.1 0.55 0.4 1.base 2.emitter 3.collector 12 3 unit: mm sot-23 0.1 +0.05 -0.01 2SC4695 features adoption of fbet process. high dc current gain. high v ebo (v ebo 25v). high reverse h fe (150 typ). small on resistance [r on =1w (i b =5ma)]. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo 50 v collector-emitter voltage v ceo 20 v emitter-base voltage v ebo 25 v collector current i c 500 ma collector current (pulse) i cp 800 ma base current i b 100 ma collector dissipation p c 250 mw junction temperature t j 150 storage temperature t stg -55to+150 smd type ic smd type smd type smd type smd type smd type product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cutoff current i cbo v cb =40v,i e =0 0.1 a emitter cutoff current i ebo v eb =20v,i c =0 0.1 a dc current gain h fe v ce =5v,i c = 10ma 300 1200 gain bandwidth product f t v ce =10v,i c = 10ma 250 mhz output capacitance c ob v cb = 10v , f = 1.0mhz 3.6 pf collector-emitter saturation voltage v ce(sat) i c =100ma,i b = 2ma 0.12 0.5 v base-emitter saturation voltage v be(sat) i c =100mv,i b = 2ma 0.85 1.2 v collector-base breakdown voltage v (br)cbo i c =10a,i e =0 50 v collector-emitter breakdown voltage v (br)ceo i c =1ma,r be = 20 v emitter-base breakdown voltage v (br)ebo i e =10a,i c =0 25 v turn-on time t on 135 ns storage time t stg 450 ns fall time t f 100 ns marking marking wt 2SC4695 smd type ic smd type smd type smd type smd type smd type product specification 2SC4695 smd type ic smd type smd type smd type smd type smd type product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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